KFU. Card publication. Resonant magnetoresistance in double-barrier antiferromagnetic tunnel junction

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FEDERAL UNIVERSITY

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RESONANT MAGNETORESISTANCE IN DOUBLE-BARRIER ANTIFERROMAGNETIC TUNNEL JUNCTION

Form of presentation

Articles in Russian journals and collections

Year of publication

2019

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Authors, employees of KFU

Useinov Niazbek Khamzovich, author

Bibliographic description in the original language

Useinov, N. Kh. Resonant magnetoresistance in double-barrier antiferromagnetic tunnel junction / N. Kh. Useinov // Magnetic Resonance in Solids, 2019, Vol.21, No.3, 19310(13pp)

Annotation

Resonant tunneling is studied theoretically for the asymmetric double-harrier antiferromagnetic tunnel junction (DAMTJ) with a bias voltage is applied. In this nanostructure, the direction of magnetization of the middle ferromagnetic layer is parallel (antiparallel) to the direction of magnetization of the top layer and antiparallel (parallel) to the direction of magnetization of the bottom ferromagnetic layer. Analytical expression for the transmission coefficient of the double-barrier nanostructure is received, which is expressed through single-barrier transmission coefficients taking into account the voltage drop on each barrier and spin degrees of freedom of the electron conductivity. The theoretical model of spin-polarized conductance and tunnel magnetoresistance in asymmetric DAMTJ in the quasi-classical approximation is developed. The dependences of the transmission coefficient and tunnel magnetoresistance on the applied voltage under resonant conditions are shown.

Keywords

spin-polarized conductance, magnetic tunnel junction, nanostructures, tunnel magnetoresistance

The name of the journal

Magnetic Resonance in Solids. Electronic Journal (MRsej)

URL

http://mrsej.kpfu.ru/contents.html#19310

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=205574&p_lang=2

Resource files

File name	Size (MB)	Format
F_N.Kh._Useinov_Magn._Reson._Solids_21__19310__2019_.pdf	0,59	pdf	show / download

Full metadata record

Field DC	Value	Language
dc.contributor.author	Useinov Niazbek Khamzovich	ru_RU
dc.date.accessioned	2019-01-01T00:00:00Z	ru_RU
dc.date.available	2019-01-01T00:00:00Z	ru_RU
dc.date.issued	2019	ru_RU
dc.identifier.citation	Useinov, N. Kh. Resonant magnetoresistance in double-barrier antiferromagnetic tunnel junction / N. Kh. Useinov // Magnetic Resonance in Solids, 2019, Vol.21, No.3, 19310(13pp)	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=205574&p_lang=2	ru_RU
dc.description.abstract	Magnetic Resonance in Solids. Electronic Journal (MRsej)	ru_RU
dc.description.abstract	Resonant tunneling is studied theoretically for the asymmetric double-harrier antiferromagnetic tunnel junction (DAMTJ) with a bias voltage is applied. In this nanostructure, the direction of magnetization of the middle ferromagnetic layer is parallel (antiparallel) to the direction of magnetization of the top layer and antiparallel (parallel) to the direction of magnetization of the bottom ferromagnetic layer. Analytical expression for the transmission coefficient of the double-barrier nanostructure is received, which is expressed through single-barrier transmission coefficients taking into account the voltage drop on each barrier and spin degrees of freedom of the electron conductivity. The theoretical model of spin-polarized conductance and tunnel magnetoresistance in asymmetric DAMTJ in the quasi-classical approximation is developed. The dependences of the transmission coefficient and tunnel magnetoresistance on the applied voltage under resonant conditions are shown.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	spin-polarized conductance	ru_RU
dc.subject	magnetic tunnel junction	ru_RU
dc.subject	nanostructures	ru_RU
dc.subject	tunnel magnetoresistance	ru_RU
dc.title	Resonant magnetoresistance in double-barrier antiferromagnetic tunnel junction	ru_RU
dc.type	Articles in Russian journals and collections	ru_RU