Kazan (Volga region) Federal University, KFU
KAZAN
FEDERAL UNIVERSITY
 
TUNNEL MAGNETORESISTANCE IN ASYMMETRIC DOUBLE-BARRIER MAGNETIC TUNNEL JUNCTIONS // JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS VOL. 373 (2015) PP. 27-29
Form of presentationArticles in international journals and collections
Year of publication2015
Языканглийский
  • Tagirov Lenar Rafgatovich, author
  • Petukhov Denis Aleksandrovich, postgraduate kfu
  • Bibliographic description in the original language Useinov, N.Kh. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions [Text] / N.Kh. Useinov, D.A. Petukhov, L.R. Tagirov // Journal of Magnetism and Magnetic Materials Vol. 373 (2015) pp. 27-29.
    Annotation The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR.
    Keywords Spin-polarized conductance, Magnetic tunnel junction, Nanostructure,Tunnel magnetoresistance
    The name of the journal Journal of Magnetism and Magnetic Materials
    URL http://www.sciencedirect.com/science/article/pii/S0304885314001632
    Please use this ID to quote from or refer to the card https://repository.kpfu.ru/eng/?p_id=84097&p_lang=2

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