KFU. Card publication. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions // Journal of Magnetism and Magnetic Materials Vol. 373 (2015) pp. 27-29

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TUNNEL MAGNETORESISTANCE IN ASYMMETRIC DOUBLE-BARRIER MAGNETIC TUNNEL JUNCTIONS // JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS VOL. 373 (2015) PP. 27-29

Form of presentation

Articles in international journals and collections

Year of publication

2015

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Authors, employees of KFU

Tagirov Lenar Rafgatovich, author

Authors, postgraduates KFU

Petukhov Denis Aleksandrovich, postgraduate kfu

Bibliographic description in the original language

Useinov, N.Kh. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions [Text] / N.Kh. Useinov, D.A. Petukhov, L.R. Tagirov // Journal of Magnetism and Magnetic Materials Vol. 373 (2015) pp. 27-29.

Annotation

The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR.

Keywords

Spin-polarized conductance, Magnetic tunnel junction, Nanostructure,Tunnel magnetoresistance

The name of the journal

Journal of Magnetism and Magnetic Materials

URL

http://www.sciencedirect.com/science/article/pii/S0304885314001632

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=84097&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Tagirov Lenar Rafgatovich	ru_RU
dc.contributor.author	Petukhov Denis Aleksandrovich	ru_RU
dc.date.accessioned	2015-01-01T00:00:00Z	ru_RU
dc.date.available	2015-01-01T00:00:00Z	ru_RU
dc.date.issued	2015	ru_RU
dc.identifier.citation	Useinov, N.Kh. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions [Text] / N.Kh. Useinov, D.A. Petukhov, L.R. Tagirov // Journal of Magnetism and Magnetic Materials Vol. 373 (2015) pp. 27-29.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=84097&p_lang=2	ru_RU
dc.description.abstract	Journal of Magnetism and Magnetic Materials	ru_RU
dc.description.abstract	The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	Spin-polarized conductance	ru_RU
dc.subject	Magnetic tunnel junction	ru_RU
dc.subject	Nanostructure	ru_RU
dc.subject	Tunnel magnetoresistance	ru_RU
dc.title	Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions // Journal of Magnetism and Magnetic Materials Vol. 373 (2015) pp. 27-29	ru_RU
dc.type	Articles in international journals and collections	ru_RU