| Form of presentation | Articles in international journals and collections |
| Year of publication | 2012 |
|
Gumarov Amir Ildusovich, author
Gumarov Gabdrauf Gabdrashitovich, author
Petukhov Vladimir Yurevich, author
Khaybullin Rustam Ildusovich, author
|
| Bibliographic description in the original language |
Gumarov G.G. MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon [Text] / G.G. Gumarov, V.Yu. Petukhov, A.I. Gumarov, R.A. Khalikov, D.A. Konovalov, V.F. Valeev, R.I. Khaibullin // Nucl. Instr. Meth. Phys. Res. B.. 2012. V. 272. P. 108-111. |
| Annotation |
Magnetic-field-assisted ion-beam synthesis was used to produce thin magnetic films. Si wafers were
implanted with 40 keV Fe+ ions with a fluence of 3 10^17 cm^2 in the external magnetic field of
9.6 104 A/m. The samples were investigated by scanning magneto-optical Kerr effect magnetometry,
inductive magnetometry and reflection high-energy electron diffraction. The main synthesized phase
was ferromagnetic Fe3Si. In some regions of the samples the deviations of the easy magnetic axis near
the applied magnetic field were revealed. These local changes can be caused by various reasons: the presence
of mechanical stresses in a silicon substrate during the ion bombardment, the appearance of temperature
gradients, inhomogeneous sputtering and the appearance of small magnetic fields in the
chamber of the accelerator. |
| Keywords |
Ion implantation, Magnetic nanoparticles, MOKE |
| URL |
http://www.sciencedirect.com/science/article/pii/S0168583X11000620 |
| Please use this ID to quote from or refer to the card |
https://repository.kpfu.ru/eng/?p_id=71834&p_lang=2 |
Full metadata record  |
| Field DC |
Value |
Language |
| dc.contributor.author |
Gumarov Amir Ildusovich |
ru_RU |
| dc.contributor.author |
Gumarov Gabdrauf Gabdrashitovich |
ru_RU |
| dc.contributor.author |
Petukhov Vladimir Yurevich |
ru_RU |
| dc.contributor.author |
Khaybullin Rustam Ildusovich |
ru_RU |
| dc.date.accessioned |
2012-01-01T00:00:00Z |
ru_RU |
| dc.date.available |
2012-01-01T00:00:00Z |
ru_RU |
| dc.date.issued |
2012 |
ru_RU |
| dc.identifier.citation |
Gumarov G.G. MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon [Text] / G.G. Gumarov, V.Yu. Petukhov, A.I. Gumarov, R.A. Khalikov, D.A. Konovalov, V.F. Valeev, R.I. Khaibullin // Nucl. Instr. Meth. Phys. Res. B.. 2012. V. 272. P. 108-111. |
ru_RU |
| dc.identifier.uri |
https://repository.kpfu.ru/eng/?p_id=71834&p_lang=2 |
ru_RU |
| dc.description.abstract |
Magnetic-field-assisted ion-beam synthesis was used to produce thin magnetic films. Si wafers were
implanted with 40 keV Fe+ ions with a fluence of 3 10^17 cm^2 in the external magnetic field of
9.6 104 A/m. The samples were investigated by scanning magneto-optical Kerr effect magnetometry,
inductive magnetometry and reflection high-energy electron diffraction. The main synthesized phase
was ferromagnetic Fe3Si. In some regions of the samples the deviations of the easy magnetic axis near
the applied magnetic field were revealed. These local changes can be caused by various reasons: the presence
of mechanical stresses in a silicon substrate during the ion bombardment, the appearance of temperature
gradients, inhomogeneous sputtering and the appearance of small magnetic fields in the
chamber of the accelerator. |
ru_RU |
| dc.language.iso |
ru |
ru_RU |
| dc.subject |
Ion implantation |
ru_RU |
| dc.subject |
Magnetic nanoparticles |
ru_RU |
| dc.subject |
MOKE |
ru_RU |
| dc.title |
MOKE investigation of silicide films ion-beam synthesized in single-crystal silicon |
ru_RU |
| dc.type |
Articles in international journals and collections |
ru_RU |
|
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