KFU. Card publication. Resonance conductance of electrons on interfaces of magnetic tunnel junction

KAZAN
FEDERAL UNIVERSITY

- RUS
- 中文
- ES

RESONANCE CONDUCTANCE OF ELECTRONS ON INTERFACES OF MAGNETIC TUNNEL JUNCTION

Form of presentation

Conference proceedings in Russian journals and collections

Year of publication

2024

Язык

английский

Authors, employees of KFU

Useinov Niazbek Khamzovich, author

Bibliographic description in the original language

Useinov, N. Kh. Resonance conductance of electrons on interfaces of magnetic tunnel junction / N. Kh. Useinov // Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives” (EPR-80). Kazan, September 23-27, 2024 – P. 154-155.

Annotation

Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives”

Keywords

Spin-polarized conductance, magnetic tunnel junction, spintronics

The name of the journal

Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives”

URL

https://epr80.knc.ru/

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=304733&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Useinov Niazbek Khamzovich	ru_RU
dc.date.accessioned	2024-01-01T00:00:00Z	ru_RU
dc.date.available	2024-01-01T00:00:00Z	ru_RU
dc.date.issued	2024	ru_RU
dc.identifier.citation	Useinov, N. Kh. Resonance conductance of electrons on interfaces of magnetic tunnel junction / N. Kh. Useinov // Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives” (EPR-80). Kazan, September 23-27, 2024 – P. 154-155.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=304733&p_lang=2	ru_RU
dc.description.abstract	Book of Abstracts of the international conferences “Magnetic resonance - current state and future perspectives”	ru_RU
dc.description.abstract	Our research is devoted to the calculation of spin-polarized dynamic conductance in point magnetic tunnel junctions (PMTJs) which have a structure: Left ferromagnetic metal/dielectric/Right ferromagnetic metal (FML/I/FMR). These PMTJs are widely used in modern spintronics nanodevices, particularly in the field of data storage: MRAM devices, read heads of hard disk drives, and programmable logic gates.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	Spin-polarized conductance	ru_RU
dc.subject	magnetic tunnel junction	ru_RU
dc.subject	spintronics	ru_RU
dc.title	Resonance conductance of electrons on interfaces of magnetic tunnel junction	ru_RU
dc.type	Conference proceedings in Russian journals and collections	ru_RU