KFU. Card publication. Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions

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FEDERAL UNIVERSITY

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FORMATION OF PORES IN THIN GERMANIUM FILMS UNDER IMPLANTATION BY GE+ IONS

Form of presentation

Articles in international journals and collections

Year of publication

2020

Язык

английский

Authors, employees of KFU

Gumarov Amir Ildusovich, author

Tagirov Lenar Rafgatovich, author

Yanilkin Igor Vitalevich, author

Bibliographic description in the original language

Lyadov N.M, Gavrilova T.P, Khantimerov S.M, Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions//Technical Physics Letters. - 2020. - Vol.46, Is.7. - P.707-709.

Annotation

Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge+ ions at fluences in the range of (1.8–8) × 1016 ions/cm2. Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films.

Keywords

ion implantation lithium-ion batteries nanostructured germanium

The name of the journal

Technical Physics Letters

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85090025781&doi=10.1134%2fS1063785020070196&partnerID=40&md5=6d5f31fd3155dcf39915caa62964bd8d

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=238895&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Gumarov Amir Ildusovich	ru_RU
dc.contributor.author	Tagirov Lenar Rafgatovich	ru_RU
dc.contributor.author	Yanilkin Igor Vitalevich	ru_RU
dc.date.accessioned	2020-01-01T00:00:00Z	ru_RU
dc.date.available	2020-01-01T00:00:00Z	ru_RU
dc.date.issued	2020	ru_RU
dc.identifier.citation	Lyadov N.M, Gavrilova T.P, Khantimerov S.M, Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions//Technical Physics Letters. - 2020. - Vol.46, Is.7. - P.707-709.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=238895&p_lang=2	ru_RU
dc.description.abstract	Technical Physics Letters	ru_RU
dc.description.abstract	Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge+ ions at fluences in the range of (1.8–8) × 1016 ions/cm2. Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject		ru_RU
dc.title	Formation of Pores in Thin Germanium Films under Implantation by Ge+ Ions	ru_RU
dc.type	Articles in international journals and collections	ru_RU