KFU. Card publication. Formation of Cu nanoparticles and Cu3Si phase in Si by ion implantation

KAZAN
FEDERAL UNIVERSITY

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- 中文
- ES

FORMATION OF CU NANOPARTICLES AND CU3SI PHASE IN SI BY ION IMPLANTATION

Form of presentation

Articles in international journals and collections

Year of publication

2020

Язык

английский

Authors, employees of KFU

Gumarov Amir Ildusovich, author

Rogov Aleksey Mikhaylovich, author

Bibliographic description in the original language

Gumarov A.I, Rogov A.M, Stepanov A.L., Formation of Cu nanoparticles and Cu3Si phase in Si by ion implantation//Composites Communications. - 2020. - Vol.21, Is.. - Art. № 100415.

Annotation

The results of low-energy high-dose implantation of single-crystal c-Si by Cu+ ions at energy 40 keV, current density 8 μA/cm2 and doses of 3.1?1016 and 1.25?1017 ion/cm2 are presented. It was shown that if the dose is low Cu nanoparticles with average diameter of 10 nm are formed in a near-surface implanted Si layer. When the dose is higher Cu ions chemically interact with the Si atoms and the synthesis of the η«-phase Cu3Si instead of Cu nanoparticles is observed. Cu nanoparticles transformation to Cu3Si phase in the sample heated by long time implantation is discussed.

Keywords

Copper nanoparticles Copper silicide Ion implantation

The name of the journal

Composites Communications

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85089000316&doi=10.1016%2fj.coco.2020.100415&partnerID=40&md5=a4d1a68255b6ebf804a17b627532196d

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=237553&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Gumarov Amir Ildusovich	ru_RU
dc.contributor.author	Rogov Aleksey Mikhaylovich	ru_RU
dc.date.accessioned	2020-01-01T00:00:00Z	ru_RU
dc.date.available	2020-01-01T00:00:00Z	ru_RU
dc.date.issued	2020	ru_RU
dc.identifier.citation	Gumarov A.I, Rogov A.M, Stepanov A.L., Formation of Cu nanoparticles and Cu3Si phase in Si by ion implantation//Composites Communications. - 2020. - Vol.21, Is.. - Art. № 100415.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=237553&p_lang=2	ru_RU
dc.description.abstract	Composites Communications	ru_RU
dc.description.abstract	The results of low-energy high-dose implantation of single-crystal c-Si by Cu+ ions at energy 40 keV, current density 8 μA/cm2 and doses of 3.1?1016 and 1.25?1017 ion/cm2 are presented. It was shown that if the dose is low Cu nanoparticles with average diameter of 10 nm are formed in a near-surface implanted Si layer. When the dose is higher Cu ions chemically interact with the Si atoms and the synthesis of the η«-phase Cu3Si instead of Cu nanoparticles is observed. Cu nanoparticles transformation to Cu3Si phase in the sample heated by long time implantation is discussed.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject		ru_RU
dc.title	Formation of Cu nanoparticles and Cu3Si phase in Si by ion implantation	ru_RU
dc.type	Articles in international journals and collections	ru_RU