KFU. Card publication. Spin-Dependent Electron Transport in MeRAM

KAZAN
FEDERAL UNIVERSITY

- RUS
- 中文
- ES

SPIN-DEPENDENT ELECTRON TRANSPORT IN MERAM

Form of presentation

Articles in Russian journals and collections

Year of publication

2020

Язык

английский

Authors, employees of KFU

Useinov Niazbek Khamzovich, author

Bibliographic description in the original language

Useinov, N. Kh. Spin-Dependent Electron Transport in MeRAM [Text] / N. Kh. Useinov, A. P. Chuklanov, D. A. Bizyaev, N. I. Nurgazizov, A. A. Bukharaev // Fizika tverdogo tela, 2020, tom 62, vyp. 9, str. 1542.

Annotation

The paper presents theoretical model of a straintronics magnetoelectric random-access memory (MeRAM) storage cell with configurational anisotropy. The MeRAM cell consists of ferromagnetic layers with different orientations of the quasi-uniform magnetization, which is divided into identical magnetic tunnel junction's ferromagnct|insulator|fcrromagnet, in the form of a sandwich of planar layers. The modified theory for magnetic tunnel junction is used to calculate the spin-dependent current and tunnel magnctorcsistance like functions of orientations magnetizations of layers.

Keywords

Straintronics, magnetic heterostructure, magnetic tunnel junction, spin-dependent current, tunnel magnetoresistance

The name of the journal

Физика твердого тела

URL

http://journals.ioffe.ru/articles/viewPDF/49783

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=234943&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Useinov Niazbek Khamzovich	ru_RU
dc.date.accessioned	2020-01-01T00:00:00Z	ru_RU
dc.date.available	2020-01-01T00:00:00Z	ru_RU
dc.date.issued	2020	ru_RU
dc.identifier.citation	Useinov, N. Kh. Spin-Dependent Electron Transport in MeRAM [Text] / N. Kh. Useinov, A. P. Chuklanov, D. A. Bizyaev, N. I. Nurgazizov, A. A. Bukharaev // Физика твердого тела, 2020, том 62, вып. 9, стр. 1542.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=234943&p_lang=2	ru_RU
dc.description.abstract	Физика твердого тела	ru_RU
dc.description.abstract	The paper presents theoretical model of a straintronics magnetoelectric random-access memory (MeRAM) storage cell with configurational anisotropy. The MeRAM cell consists of ferromagnetic layers with different orientations of the quasi-uniform magnetization, which is divided into identical magnetic tunnel junction's ferromagnct\|insulator\|fcrromagnet, in the form of a sandwich of planar layers. The modified theory for magnetic tunnel junction is used to calculate the spin-dependent current and tunnel magnctorcsistance like functions of orientations magnetizations of layers.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	Straintronics	ru_RU
dc.subject	magnetic heterostructure	ru_RU
dc.subject	magnetic tunnel junction	ru_RU
dc.subject	spin-dependent current	ru_RU
dc.subject	tunnel magnetoresistance	ru_RU
dc.title	Spin-Dependent Electron Transport in MeRAM	ru_RU
dc.type	Articles in Russian journals and collections	ru_RU