KFU. Card publication. NMR and Mössbauer study of p-type half-Heusler thermoelectrics Nb 1− x Ti x FeSb

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FEDERAL UNIVERSITY

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NMR AND MöSSBAUER STUDY OF P-TYPE HALF-HEUSLER THERMOELECTRICS NB 1− X TI X FESB

Form of presentation

Conference proceedings in international journals and collections

Year of publication

2020

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Authors, employees of KFU

Vagizov Farit Gabdulkhakovich, author

Other authors

Ghassemi Nader , author

Li Rui , author

Ren Wuyang , author

Ren Zhifeng , author

Ross Joseph H. , author

Tian Yefan , author

Zhu Hangtian , author

Bibliographic description in the original language

Tian, Y. NMR and Mössbauer study of p-type half-Heusler thermoelectrics Nb 1− x Ti x FeSb / Y Tian, R Li, F Vagizov, N Ghassemi, W Ren, H Zhu, Z Ren, J Ross // Bulletin of the American Physical Society. - 2020. - v.65, No. 1 - G27.00015

Annotation

APS March Meeting 2020 March 2–6, 2020; Denver, Colorado Session G27: Electronic Structure: Thermodynamic & Optical Properties

Keywords

Mossbauer spectroscopy, NMR, thermoelectric efficiency, NbFeSb-based semiconductors,

The name of the journal

APS March Meeting 2020 March 2–6, 2020; Denver, Colorado Session G27: Electronic Structure: Thermodynamic & Optical Properties

On-line resource for training course

http://dspace.kpfu.ru/xmlui/bitstream/handle/net/158965/F_Vagizov_NMR_and_M__246_ssbauer_study_of_p_type_half__eusler_thermoelectrics_Nb1__8722__xTi_xFeSb.pdf?sequence=1&isAllowed=y

URL

http://meetings.aps.org/Meeting/MAR20/Session/G27.15

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=234710&p_lang=2

Resource files

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Full metadata record

Field DC	Value	Language
dc.contributor.author	Vagizov Farit Gabdulkhakovich	ru_RU
dc.contributor.author	Ghassemi Nader	ru_RU
dc.contributor.author	Li Rui	ru_RU
dc.contributor.author	Ren Wuyang	ru_RU
dc.contributor.author	Ren Wuyang	ru_RU
dc.contributor.author	Ren Zhifeng	ru_RU
dc.contributor.author	Ross Joseph H.	ru_RU
dc.contributor.author	Tian Yefan	ru_RU
dc.contributor.author	Zhu Hangtian	ru_RU
dc.date.accessioned	2020-01-01T00:00:00Z	ru_RU
dc.date.available	2020-01-01T00:00:00Z	ru_RU
dc.date.issued	2020	ru_RU
dc.identifier.citation	Tian, Y. NMR and Mössbauer study of p-type half-Heusler thermoelectrics Nb 1− x Ti x FeSb / Y Tian, R Li, F Vagizov, N Ghassemi, W Ren, H Zhu, Z Ren, J Ross // Bulletin of the American Physical Society. - 2020. - v.65, No. 1 - G27.00015	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=234710&p_lang=2	ru_RU
dc.description.abstract	APS March Meeting 2020 March 2–6, 2020; Denver, Colorado Session G27: Electronic Structure: Thermodynamic & Optical Properties	ru_RU
dc.description.abstract	To investigate the local behavior of defects and mixed compositions in NbFeSb-based semiconductors, for improved thermoelectric efficiency, we have performed 93Nb and 121Sb NMR, as well as Mössbauer measurements, on pure NbFeSb and a series of p-type Ti-substituted (Nb,Ti)FeSb samples with different substitution levels. A small but consistently increasing paramagnetic defect density is observed with the increase of Ti substitution level revealing the existence of additional Ti-induced paramagnetic defects. NMR line shapes show a clear difference between effect of intrinsic and extrinsic defects in NbFeSb. The NMR shifts can be well understood by a model combining a Knight shift and composition-dependent chemical shift. The results indicate a nearly rigid-band behavior for the valence band with a small enhacement of effective mass vs substitution. For pure NbFeSb samples, the Mössbauer spectra include an additional T-dependent singlet. The increase of its area can be explained based on carriers activated into a shallow acceptor-like defect level above the valence band, consistent with the defect activation results obtained with NMR. In samples with Ti substitution, the Mössbauer spectra are consistent with a random neighbor distribution, indicating no preferential local ordering.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	Mossbauer spectroscopy	ru_RU
dc.subject	NMR	ru_RU
dc.subject	thermoelectric efficiency	ru_RU
dc.subject	NbFeSb-based semiconductors	ru_RU
dc.subject		ru_RU
dc.title	NMR and Mössbauer study of p-type half-Heusler thermoelectrics Nb 1− x Ti x FeSb	ru_RU
dc.type	Conference proceedings in international journals and collections	ru_RU