KFU. Card publication. Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering

KAZAN
FEDERAL UNIVERSITY

- RUS
- 中文
- ES

ELECTRICAL PROPERTIES OF TITANIUM NITRIDE FILMS SYNTHESIZED BY REACTIVE MAGNETRON SPUTTERING

Form of presentation

Articles in international journals and collections

Year of publication

2017

Authors, employees of KFU

Vakhitov Iskander Rashidovich, author

Gumarov Amir Ildusovich, author

I Yanpin , author

Kiyamov Ayrat Gazinurovich, author

Nikitin Sergey Ivanovich, author

Tagirov Lenar Rafgatovich, author

Kharincev Sergey Sergeevich, author

Yusupov Roman Valerevich, author

Authors, postgraduates KFU

Mokhammed Vael Mokhammed Makhmud, postgraduate kfu

Bibliographic description in the original language

Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.

Annotation

Keywords

polycrystalline- van-der Pauw method - four point prob

Place of publication

United Kingdom

The name of the journal

Journal of Physics: Conference Series

Publishing house

IOP Science, scopus

URL

http://iopscience.iop.org/article/10.1088/1742-6596/927/1/012036

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=184697&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Vakhitov Iskander Rashidovich	ru_RU
dc.contributor.author	Gumarov Amir Ildusovich	ru_RU
dc.contributor.author	I Yanpin	ru_RU
dc.contributor.author	Kiyamov Ayrat Gazinurovich	ru_RU
dc.contributor.author	Nikitin Sergey Ivanovich	ru_RU
dc.contributor.author	Tagirov Lenar Rafgatovich	ru_RU
dc.contributor.author	Kharincev Sergey Sergeevich	ru_RU
dc.contributor.author	Yusupov Roman Valerevich	ru_RU
dc.contributor.author	Mokhammed Vael Mokhammed Makhmud	ru_RU
dc.date.accessioned	2017-01-01T00:00:00Z	ru_RU
dc.date.available	2017-01-01T00:00:00Z	ru_RU
dc.date.issued	2017	ru_RU
dc.identifier.citation	Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=184697&p_lang=2	ru_RU
dc.description.abstract	Journal of Physics: Conference Series	ru_RU
dc.description.abstract	Reactive dc magnetron sputtering was employed to produce thin films of titanium nitride using titanium metallic target, argon as the plasma gas and nitrogen as the reactive gas. A set of the films was studied deposited on the Si, fused silica and crystalline (001) MgO substrates with various deposition conditions. The films deposited on the Si and SiO2 substrates are polycrystalline while deposited at slow rate to the heated to 600C MgO substrate are highly epitaxial according both to XRD and LEED data. Electrical resistivity of the films was measured by means of the four-probe van der Pauw method.	ru_RU
dc.language.iso	ru	ru_RU
dc.publisher	IOP Science, scopus	ru_RU
dc.subject		ru_RU
dc.title	Electrical properties of titanium nitride films synthesized by reactive magnetron sputtering	ru_RU
dc.type	Articles in international journals and collections	ru_RU