KFU. Card publication. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure

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OPTICALLY ADDRESSABLE SILICON VACANCY-RELATED SPIN CENTERS IN RHOMBIC SILICON CARBIDE WITH HIGH BREAKDOWN CHARACTERISTICS AND ENDOR EVIDENCE OF THEIR STRUCTURE

Form of presentation

Articles in international journals and collections

Year of publication

2015

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Authors, employees of KFU

Orlinskiy Sergey Borisovich, author

Yavkin Boris Vladimirovich, author

Other authors

Soltamov, Tolmachev, Babunc, Badalyan, Davydov, Mokhov, Proskuryakov, Baranov Viktor, Daniil, Roman, Andrey, Vladimir, Evgeniy, Ivan, Pavel , author

Bibliographic description in the original language

1. Soltamov V. A., Yavkin B. V., Tolmachev D. O., Babunts R. A., Badalyan A. G., Davydov V. Y., Mokhov E. N., Proskuryakov I. I., Orlinskii S. B., Baranov P. G. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure // Physical Review Letters. ‒ 2015. ‒ T. 115, � 24. ‒ C. 247602.

Keywords

Color centers and other defects, Optically detected magnetic resonance (ODMR), Electron-nuclear double resonance (ENDOR), electron double resonance (ELDOR), Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

The name of the journal

PHYS REV LETT

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=135662&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Orlinskiy Sergey Borisovich	ru_RU
dc.contributor.author	Yavkin Boris Vladimirovich	ru_RU
dc.contributor.author	Soltamov, Tolmachev, Babunc, Badalyan, Davydov, Mokhov, Proskuryakov, Baranov Viktor, Daniil, Roman, Andrey, Vladimir, Evgeniy, Ivan, Pavel	ru_RU
dc.date.accessioned	2015-01-01T00:00:00Z	ru_RU
dc.date.available	2015-01-01T00:00:00Z	ru_RU
dc.date.issued	2015	ru_RU
dc.identifier.citation	1. Soltamov V. A., Yavkin B. V., Tolmachev D. O., Babunts R. A., Badalyan A. G., Davydov V. Y., Mokhov E. N., Proskuryakov I. I., Orlinskii S. B., Baranov P. G. Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure // Physical Review Letters. ‒ 2015. ‒ T. 115, � 24. ‒ C. 247602.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=135662&p_lang=2	ru_RU
dc.description.abstract	PHYS REV LETT	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	Color centers and other defects	ru_RU
dc.subject	Optically detected magnetic resonance (ODMR)	ru_RU
dc.subject	Electron-nuclear double resonance (ENDOR)	ru_RU
dc.subject	electron double resonance (ELDOR)	ru_RU
dc.subject	Indirect evidence of dislocations and other defects (resistivity	ru_RU
dc.subject	slip	ru_RU
dc.subject	creep	ru_RU
dc.subject	strains	ru_RU
dc.subject	internal friction	ru_RU
dc.subject	EPR	ru_RU
dc.subject	NMR	ru_RU
dc.subject	etc.)	ru_RU
dc.title	Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure	ru_RU
dc.type	Articles in international journals and collections	ru_RU