KFU. Card publication. Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles

KAZAN
FEDERAL UNIVERSITY

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- 中文
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TUNNEL MAGNETORESISTANCE IN MAGNETIC TUNNEL JUNCTIONS WITH EMBEDDED NANOPARTICLES

Form of presentation

Articles in international journals and collections

Year of publication

2015

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Authors, employees of KFU

Useinov Artur Niazbekovich, author

Useinov Niazbek Khamzovich, author

Other authors

Lai C. H., author

Bibliographic description in the original language

Useinov, A.N. Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles / A.N. Useinov, N.K. Useinov, L.-Xe. Ye, T.-H. Wu, C.-H. Lai // IEEE Transactions on Magnetics. - 2015. 51, Issue: 11 Article #: 4401404, DOI: 10.1109/TMAG.2015.2451705.

Annotation

In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily simulated within our model: we found, that the suppressed TMR magnitudes and the TMR sign-reversing effect at small voltages are related to the electron momentum states of the NP located inside the insulating layer. All these TMR behaviors can be explained within the tunneling model, where NP is simulated as a quantum well (QW). The coherent double barrier tunneling is dominating over the single barrier one. The origin of the TMR suppression is the quantized angle transparency for spin polarized electrons being in one of the lowest QW states. The phenomenon was classified as the quantized conductance regime due to restricted geometry.

Keywords

Ballistic transport, magnetic tunnel junctions, nanoparticles, tunnel magnetoresistance.

The name of the journal

IEEE Transactions on Magnetics

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=120062&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Useinov Artur Niazbekovich	ru_RU
dc.contributor.author	Useinov Niazbek Khamzovich	ru_RU
dc.contributor.author	Lai C. H.	ru_RU
dc.date.accessioned	2015-01-01T00:00:00Z	ru_RU
dc.date.available	2015-01-01T00:00:00Z	ru_RU
dc.date.issued	2015	ru_RU
dc.identifier.citation	Useinov, A.N. Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles / A.N. Useinov, N.K. Useinov, L.-Xe. Ye, T.-H. Wu, C.-H. Lai // IEEE Transactions on Magnetics. - 2015. 51, Issue: 11 Article #: 4401404, DOI: 10.1109/TMAG.2015.2451705.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=120062&p_lang=2	ru_RU
dc.description.abstract	IEEE Transactions on Magnetics	ru_RU
dc.description.abstract	In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily simulated within our model: we found, that the suppressed TMR magnitudes and the TMR sign-reversing effect at small voltages are related to the electron momentum states of the NP located inside the insulating layer. All these TMR behaviors can be explained within the tunneling model, where NP is simulated as a quantum well (QW). The coherent double barrier tunneling is dominating over the single barrier one. The origin of the TMR suppression is the quantized angle transparency for spin polarized electrons being in one of the lowest QW states. The phenomenon was classified as the quantized conductance regime due to restricted geometry.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	Ballistic transport	ru_RU
dc.subject	magnetic tunnel junctions	ru_RU
dc.subject	nanoparticles	ru_RU
dc.subject	tunnel magnetoresistance.	ru_RU
dc.title	Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles	ru_RU
dc.type	Articles in international journals and collections	ru_RU