KFU. Card publication. Spectral Ellipsometry of Cobalt-ions Implanted Silicon Surface

KAZAN
FEDERAL UNIVERSITY

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SPECTRAL ELLIPSOMETRY OF COBALT-IONS IMPLANTED SILICON SURFACE

Form of presentation

Articles in international journals and collections

Year of publication

2015

Язык

английский

Authors, employees of KFU

Gumarov Gabdrauf Gabdrashitovich, author

Osin Yuriy Nikolaevich, author

Stepanov Andrey Lvovich, author

Other authors

Bazarov Valeriy Vyacheslavovich, author

Valeev Valeriy Ferdinandovich, author

Nuzhdin Vladimir Ivanovich, author

Bibliographic description in the original language

Spectral Ellipsometry of Cobalt-ions Implanted Silicon Surface / V.V. Bazarov V.F., Valeev, V.I. Nuzhdin, Yu.N. Osin, G.G. Gumarov, A.L. Stepanov // Solid State Phenomena. - 2015. - No. 233-234 P. 526-529.

Annotation

Monocrystalline silicon wafers implanted by cobalt ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated by optical spectroscopic ellipsometry. By comparison of experimental data with modeling it is shown that the ellipsometric measurements are accurate and reliable method for monitoring of a low-dose ion implantation process.

Keywords

ion implantation, spectral ellipsometry, magnetic layers, Kerr effect, implanted silicon

The name of the journal

Solid State Phenomena

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=106512&p_lang=2

Resource files

File name	Size (MB)	Format
SSP.233_234.526.Bazarov.pdf	2,67	pdf	show / download

Full metadata record

Field DC	Value	Language
dc.contributor.author	Gumarov Gabdrauf Gabdrashitovich	ru_RU
dc.contributor.author	Osin Yuriy Nikolaevich	ru_RU
dc.contributor.author	Osin Yuriy Nikolaevich	ru_RU
dc.contributor.author	Stepanov Andrey Lvovich	ru_RU
dc.contributor.author	Bazarov Valeriy Vyacheslavovich	ru_RU
dc.contributor.author	Valeev Valeriy Ferdinandovich	ru_RU
dc.contributor.author	Nuzhdin Vladimir Ivanovich	ru_RU
dc.date.accessioned	2015-01-01T00:00:00Z	ru_RU
dc.date.available	2015-01-01T00:00:00Z	ru_RU
dc.date.issued	2015	ru_RU
dc.identifier.citation	Spectral Ellipsometry of Cobalt-ions Implanted Silicon Surface / V.V. Bazarov V.F., Valeev, V.I. Nuzhdin, Yu.N. Osin, G.G. Gumarov, A.L. Stepanov // Solid State Phenomena. - 2015. - No. 233-234 P. 526-529.	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=106512&p_lang=2	ru_RU
dc.description.abstract	Solid State Phenomena	ru_RU
dc.description.abstract	Monocrystalline silicon wafers implanted by cobalt ions with energy of 40 keV at a fluence range from 6.6×1012 to 2.5×1017 Co+-ion/cm2 were investigated by optical spectroscopic ellipsometry. By comparison of experimental data with modeling it is shown that the ellipsometric measurements are accurate and reliable method for monitoring of a low-dose ion implantation process.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	ion implantation	ru_RU
dc.subject	spectral ellipsometry	ru_RU
dc.subject	magnetic layers	ru_RU
dc.subject	Kerr effect	ru_RU
dc.subject	implanted silicon	ru_RU
dc.title	Spectral Ellipsometry of Cobalt-ions Implanted Silicon Surface	ru_RU
dc.type	Articles in international journals and collections	ru_RU