KFU. Card publication. SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION

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SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION

Form of presentation

Articles in Russian journals and collections

Year of publication

2015

Язык

английский

Authors, employees of KFU

Vorobev Vyacheslav Valerevich, author

Osin Yuriy Nikolaevich, author

Other authors

Kavetskyy T S, author

Nuzhdin V I, author

Valeev V F, author

Authors, postgraduates KFU

Vorobev Vyacheslav Valerevich, postgraduate kfu

Bibliographic description in the original language

SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION / A.L. Stepanov, V.I. Nuzhdin, V.F. Valeev, V.V. Vorobev, T.S. Kavetskyy, Y.N. Osin, // REVIEWS ON ADVANCED MATERIALS SCIENCE. - 2015. - № 40. - P. 155-164

Annotation

Porous materials have attracted remarkable concerns and found tremendous importance widespread in both fundamental research and industrial applications. Such materials could be widely used for variety applications as absorbents, lightings, catalysts, and for biological molecular filtration and isolation. One quite known method for preparation of porous semiconductor structures is ion implantation, which was successfully used to create porous germanium layers by Ge+-, Bi+- and Sn+-ion irradiation of crystalline germanium substrates. It was also shown that ion implantation suited to produce porous structures in amorphous germanium and SiGe (90% of germanium) alloys thin films. Ion implantation is a well established and all over the world accessible technique, being mainly used for semiconductor microelectronic device fabrication. Unfortunately, a possibility about porous silicon (PSi) fabrication using ion implantation was not completely studied now.

Keywords

POROUS SILICON, implantation

The name of the journal

Reviews on Advanced Materials Science

URL

http://www.ipme.ru/e-journals/RAMS/no_24015/05_24015_stepanov.html

Please use this ID to quote from or refer to the card

https://repository.kpfu.ru/eng/?p_id=106046&p_lang=2

Full metadata record

Field DC	Value	Language
dc.contributor.author	Vorobev Vyacheslav Valerevich	ru_RU
dc.contributor.author	Osin Yuriy Nikolaevich	ru_RU
dc.contributor.author	Kavetskyy T S	ru_RU
dc.contributor.author	Nuzhdin V I	ru_RU
dc.contributor.author	Valeev V F	ru_RU
dc.contributor.author	Vorobev Vyacheslav Valerevich	ru_RU
dc.contributor.author	Vorobev Vyacheslav Valerevich	ru_RU
dc.contributor.author	Vorobev Vyacheslav Valerevich	ru_RU
dc.date.accessioned	2015-01-01T00:00:00Z	ru_RU
dc.date.available	2015-01-01T00:00:00Z	ru_RU
dc.date.issued	2015	ru_RU
dc.identifier.citation	SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION / A.L. Stepanov, V.I. Nuzhdin, V.F. Valeev, V.V. Vorobev, T.S. Kavetskyy, Y.N. Osin, // REVIEWS ON ADVANCED MATERIALS SCIENCE. - 2015. - № 40. - P. 155-164	ru_RU
dc.identifier.uri	https://repository.kpfu.ru/eng/?p_id=106046&p_lang=2	ru_RU
dc.description.abstract	Reviews on Advanced Materials Science	ru_RU
dc.description.abstract	Porous materials have attracted remarkable concerns and found tremendous importance widespread in both fundamental research and industrial applications. Such materials could be widely used for variety applications as absorbents, lightings, catalysts, and for biological molecular filtration and isolation. One quite known method for preparation of porous semiconductor structures is ion implantation, which was successfully used to create porous germanium layers by Ge+-, Bi+- and Sn+-ion irradiation of crystalline germanium substrates. It was also shown that ion implantation suited to produce porous structures in amorphous germanium and SiGe (90% of germanium) alloys thin films. Ion implantation is a well established and all over the world accessible technique, being mainly used for semiconductor microelectronic device fabrication. Unfortunately, a possibility about porous silicon (PSi) fabrication using ion implantation was not completely studied now.	ru_RU
dc.language.iso	ru	ru_RU
dc.subject	POROUS SILICON	ru_RU
dc.subject	implantation	ru_RU
dc.title	SYNTHESIS OF POROUS SILICON BY ION IMPLANTATION	ru_RU
dc.type	Articles in Russian journals and collections	ru_RU